? semiconductor components industries, llc, 2006 february, 2006 ? rev. 1 1 publication order number: mmt08b350t3/d mmt08b350t3 preferred devices thyristor surge protectors high voltage bidirectional tspd these thyristor surge protec tive devices (t spd) prevent overvoltage damage to sensitive circuits by lightning, induction and power line crossings. they are breakover?triggered crowbar protectors. turn?off occurs when the surge current falls below the holding current value. secondary protection applications for electronic telecom equipment at customer premises. features ? high surge current capability: 80 amps 10 x 1000 sec, for controlled temperature environments ? the mmt08b350t3 is used to help equipment meet various regulatory requirements including: bellcore 1089, itu k.20 & k.21, iec 950, ul 1459 & 1950 and fcc part 68. ? bidirectional protection in a single device ? little change of voltage limit with transient amplitude or rate ? freedom from wearout mechanisms present in non?semiconductor devices ? fail?safe, shorts when overstressed, preventing continued unprotected operation ? surface mount technology (smt) ? indicates ul recognized ? file #e210057 ? pb?free package is available maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit off?state voltage ? maximum v dm 300 v maximum pulse surge short circuit current non?repetitive double exponential decay waveform (?25 c initial temperature) (notes 1 and 2) 2 x 10 sec 8 x 20 sec 10 x 160 sec 10 x 360 sec 10 x 560 sec 10 x 700 sec 10 x 1000 se i pps1 i pps2 i pps3 i pps4 i pps5 i pps6 i pps7 250 250 150 150 100 100 80 a(pk) non?repetitive peak on?state current 60 hz full sign wave i tsm 32 a(pk) maximum non?repetitive rate of change of on?state current exponential waveform, < 100 a di/dt 300 a/ s maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. allow cooling before testing second polarity. 2. measured under pulse conditions to reduce heating. bidirectional tspd 80 amp surge, 350 volts mt1 mt2 ( ) http://onsemi.com preferred devices are recommended choices for future use and best overall value. device package shipping ? ordering information mmt08b350t3 smb 2500/tape and ree l ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. mmt08b350t3g smb (pb?free) 2500/tape and ree l smb (no polarity) (essentially jedec do?214aa) case 403c a = assembly location y = year ww = work week rpcm = device code = pb?free package marking diagram (note: microdot may be in either location) ayww rpcm
mmt08b350t3 http://onsemi.com 2 thermal characteristics characteristic symbol max unit operating temperature range blocking or conducting state t j1 ?40 to + 125 c overload junction temperature ? maximum conducting state only t j2 + 175 c maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 c electrical characteristics (t j = 25 c unless otherwise noted) devices are bidirectional. all electrical parameters apply to forward and reverse polarities. characteristics symbol min typ max unit breakover voltage (both polarities) (dv/dt = 100 v/ s, i sc = 1.0 a, vdc = 1000 v) (+65 c) v (bo) ? ? ? ? 400 412 v breakover voltage (both polarities) (f = 60 hz, i sc = 1.0 a(rms), v oc = 1000 v(rms), r i = 1.0 k , t = 0.5 cycle) (note 3) (+65 c) v (bo) ? ? ? ? 400 412 v breakover voltage temperature coefficient dv (bo) /dt j ? 0.12 ? v/ c breakdown voltage (i (br) = 1.0 ma) both polarities v (br) ? 350 ? v off state current (v d1 = 50 v) both polarities off state current (v d2 = v dm ) both polarities i d1 i d2 ? ? ? ? 2.0 5.0 a on?state voltage (i t = 1.0 a) (pw 300 s, duty cycle 2%) (note 3) v t ? 1.7 3.0 v breakover current (f = 60 hz, v dm = 1000 v(rms), r s = 1.0 k ) both polarities i bo ? 475 ? ma holding current (both polarities) (note 3) v s = 500 v; i t (initiating current) = 1.0 a (+65 c) i h 150 130 270 ? ? ? ma critical rate of rise of off?state voltage (linear waveform, v d = rated v br , t j = 25 c) dv/dt 2000 ? ? v/ s capacitance (f = 1.0 mhz, 50 vdc, 1.0 v rms signal) capacitance (f = 1.0 mhz, 2.0 vdc, 1.0 v rms signal) c o ? ? 20 42 25 45 pf 3. measured under pulse conditions to reduce heating. + current + voltage v tm v (bo) i (bo) i d2 i d1 v d1 v d2 v (br) i h symbol parameter i d1 , i d2 off state leakage current v d1 , v d2 off state blocking voltage v br breakdown voltage v bo breakover voltage i bo breakover current i h holding current v tm on state voltage voltage current characteristic of tspd (bidirectional device)
mmt08b350t3 http://onsemi.com 3 v br , breakdown voltage (volts) i d1 , off?state current ( a) figure 1. typical off?state current versus temperature temperature ( c) 140 120 100 80 60 0 ?40 ?60 100 10 1.0 0.1 0.01 figure 2. typical breakdown voltage versus temperature temperature ( c) v d1 = 50v 0 ?60 1 40 390 380 370 360 350 340 320 400 ?40 20 ?20 20 40 ?20 40 120 100 60 80 0.001 330 440 430 420 410 400 380 390 current (a) i pp ? peak pulse current ? %i pp i h , holding current (ma) v bo , breakover voltage (volts ) figure 3. maximum breakover voltage versus temperature figure 4. typical holding current versus temperature temperature ( c) ?40 100 temperature ( c) 40 0 ?60 140 time (sec) 10000 0 1000 100 10 420 320 220 figure 5. exponential decay pulse waveform figure 6. peak surge on?state current versus surge current duration, sinusoidal waveform ?40 20 ?20 60 120 100 80 550 500 400 300 200 ?20 0 20 40 60 80 100 120 time ( s) 0 50 0 100 t r = rise time to peak value t f = decay time to half value t r t f peak value half value 240 260 280 300 380 400 340 360 450 350 250 150 600
mmt08b350t3 http://onsemi.com 4 telecom equipment outside plant tip ring gnd telecom equipment outside plant tip ring gnd telecom equipment outside plant tip ring gnd pptc* pptc* heat coil heat coil *polymeric ptc (positive temperature coefficient) overcurrent protection device
mmt08b350t3 http://onsemi.com 5 package dimensions smb case 403c?01 issue a *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* a s d b j p k c h notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. d dimension shall be measured within dimension p. dim min max min max millimeters inches a 0.160 0.180 4.06 4.57 b 0.130 0.150 3.30 3.81 c 0.075 0.095 1.90 2.41 d 0.077 0.083 1.96 2.11 h 0.0020 0.0060 0.051 0.152 j 0.006 0.012 0.15 0.30 k 0.030 0.050 0.76 1.27 p 0.020 ref 0.51 ref s 0.205 0.220 5.21 5.59 mm inches scale 8:1 2.743 0.108 2.159 0.085 2.261 0.089 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 mmt08b350t3/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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